DISCO Corporation has developed an edge trimming technology for TSV wafers
DISCO Corporation (headquarters: Ota-ku, Tokyo, President: Kazuma Sekiya) has developed an innovative technology, which conducts edge trimming after bonding a substrate (support substrate for transfer) and a wafer, for the TSV (Through Silicon Via) wafer manufacturing process.
Development Background & Features
One of the processes which prevents breakage due to edge chipping during wafer thinning is edge trimming.
When using edge trimming on TSV wafers, which conventionally require a high level of cleanliness, the wafer is cleaned after trimming and then bonded to a substrate in order to maintain the cleanliness of the bonded interface (see the below drawing).
This technology, newly developed by DISCO, enables conducting edge trimming after bonding the TSV wafer to a substrate so that cleaning before bonding is not necessary any more. This provides simplification and cost reduction in the process. |
DFD6361
Edge Trimming Specification |
Process Flow Comparison
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Conventional process
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New process
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Processing quality
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The same as for the conventional edge trimming process, the new process prevents the wafer edge from becoming sharp, thereby preventing edge chipping.
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Schedule
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