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Press Release

November 25, 2014

Announcing two new types of precision processing tools
DPEG-MZ, a gettering DP wheel to improve die strength*1
ZH14 series hub blades for stable processing under high load conditions

DISCO Corporation (Head office: Ota-ku, Tokyo; President: Kazuma Sekiya) has developed a new dry polish wheel for the backside polishing of semiconductor wafers and a new series of dicing blades. These products will be on display at SEMICON Japan 2014 (Dec. 3 to 5 at the Tokyo Big Sight).


DPEG-MZ, a gettering wheel to improve die strength

Development background
In 2009, DISCO developed the DPEG series of gettering DP wheels to improve die strength while maintaining gettering effects*2 at the same time*3. The DPEG series has seen widespread use in the manufacturing processes for memory devices.
(press release on 2009:https://www.disco.co.jp/eg/news/press/20091130_2.html)
The DPEG series can maintain both the gettering effect and high die strength when wafers are at a 50 µm level of thickness. As device profiles continue to shrink, demand for die strength improvements at ever thinner levels continues to grow.
Product characteristics
The newly developed DPEG-MZ wheel makes it possible to obtain die strength improved over the existing DPEG series.
Sufficient die strength is maintained even when processing wafers down to a finish thickness of 25 µm, which helps to reduce the risk of breakage in any subsequent assembly processes, including die bonding.
3-point bending*4 test die strength comparison Finish thickness: 25 µm
Process: DBG (Dicing Before Grinding)
Grinding equipment: DGP8760
Dicing equipment: DFD6361 half cut spec
3-point bending*4 test die strength comparison


ZH14 series hub blades for stable processing under high load conditions

Development background
In order to realize further reductions in size and profile of devices, the use of flip chip*5 designs with bumps is expanding. In order to cut these wafers, blades with long blade exposure must be used in the dicing process, but the long blade exposure creates conditions where wavy cutting and slanted cutting occur easily, and this presents issues for dicing.
Product characteristics
By adopting the new developed, high rigidity V1 bond, blade breakage and wavy cutting can be suppressed to realize high processing quality even under high load conditions. Examples of such conditions include high speed, deep cutting, and long blade exposure processes.
Improvement of product quality with high speed processing
The blade breakage speed limit*6 is improved by 20% to enable stable processing at high speeds for improved processing quality.
Improvement of product quality with high speed processing
Improved processing quality
Processing without slanted or wavy cutting is possible even when performing deep cuts or when cutting with long blade exposures.
(SEM image)
Conventional ZH14 Workpiece: Si (2 mm thickness)
Depth: 1 mm
Feed speed: 110 mm/s
Revolutions: 30,000 min-1
Blade: SD2000-**-50
Kerf: 25μm
Exposure: 1.28mm
Conventional ZH14
* For this evaluation, a thin blade with long blade exposure was fabricated to simulate conditions where processing defects are likely to occur.

Scheduled release date
December 2014: Displayed at SEMICON Japan 2014
Sample shipments: Currently in progress

*1 Die strength
Die strength refers to the physical strength against bending of a given semiconductor die. Usually die strength is measured using a breaking test after a wafer is ground/polished and cut into the appropriate die size.
During wafer backside grinding, the wafer surface will be processed into a shape where breakage occurs more easily. This surface layer, where the processing damage remains, is known as the fracture layer, and this layer causes die strength to fall. Die strength can be improved through using stress relief processes such as dry polishing and CMP to remove this fracture layer.
Improved die strength can reduce the occurrence of wafer breakage and chipping in assembly processes that take place after cutting. Consequently, the yield and reliability of the final product may also improve.
*2 Gettering effect
Within the silicon substrate (inside or on the backside) gettering sites (crystal defects or flaws) are formed. These sites capture and hold impurities and contaminants to prevent metal contamination from causing issues with device characteristics. Gettering DP creates a thin damage layer on the wafer backside to capture heavy metal impurities.
Diagram of the gettering effect
Diagram of the gettering effect
*3 Obtaining both die strength and gettering effects
Generally, if the stress relief processes remove the fracture layer, the gettering effect of the workpiece will be insufficient.
*4 3 point bending test
A measurement method where a linearly increasing load is applied to the die, and the stress when die breakage occurs is measured.
3 point bending test
*5 Flip chip
Flip chip refers to device designs where the die and the substrate are connected using solder bumps. Compared to existing connection methods using wires, the mounting area can be reduced, and the length of the wires can be reduced for better electrical characteristics. Flip chip designs are seeing increasing usage in semiconductor devices in order to realize miniaturization and thinning of the final end product.
Flip chip
*6 Blade breakage speed limit
The maximum rotation speed before blade breakage occurs.
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