| |
DFE8040
 |
DFE8060
|
 |
|
| Wafer Diameter |
ø8" |
ø8" or ø300 mm |
| Processing Method |
High-density, high-pressure, narrow-gap plasma |
| Treatment gas used |
SF6/He/N2 |
| Wafer transport section |
| |
No. of cassettes |
2 |
| Cassette section wafer flow |
Open flow (Storage only) |
| Transfer arm |
· Transports wafers from the spinner table of the grinder to the chuck table in the chamber.
· Transports etched wafers from the chuck table in the chamber to the dummy table. |
| Dummy table |
Table onto which etched wafers are transported by the transfer arm before they are unloaded into the cassette by the robot. |
| Robot |
Transports etched wafers from the dummy table to the cassette. |
| Cassette stage |
Plate on which a cassette to store etched wafers is placed. |
| Cassette used |
DBG cassette only |
| Utility Unit |
| |
Dry-pump |
Used to exhaust the chamber. |
| Exhaust velocity |
27m3/h
|
| Ultimate pressure |
10 Pa abs |
| * The recommended overhaul interval is 12 months. |
| Rotary pump |
Used to vacuum the chuck table. |
| Exhaust velocity |
1.9m3/h |
| Ultimate pressure |
0.3 Pa abs |
| * The recommended overhaul interval is 12 months. |
| RF power |
High-frequency power used for plasma generation |
| Mass flow controller |
Regulates supply gas flow. |
| Valves |
Used for etching section/utility gas section operation control. |
| Gas detector |
Detects HF leakage from the machine/utility unit.
* It is recommended that the break monitor is calibrated once in half a year. |
| Gas filter |
Eliminates such substances as HF, SiF4, and SOF2 from residual gas after etching. |
| |
Coolant Unit (2: one for cooling the upper electrode and the other for cooling the lower electrode)
*The below specifications show the values for one unit. |
| Temperature set up range |
+5 to +35 °C |
| Maximum flow |
15 L/min |
12 L/min |
| Maximum pumping pressure |
0.42 MPa |
| Cooling capacity |
2.41 kW
(water temperature set at 20°C） |
3.5 kW
(water temperature set at 20°C） |
| Water used |
Deionized water |
| Utilities |
|
Electricity |
Power supply |
3-phase, 200 VAC 10%, 50/60 Hz |
| Power consumption |
5.0 kW(during plasma generation)
3.4 kW(during standby) |
7.0 kW(during plasma generation)
4.0 kW(during standby) |
| *The above values are reference values. They may vary depending on the operating conditions. |
| Maximum power |
17 kVA |
25 kVA |
| Treatment Gas |
Gas used |
SF6:
99.99% or higher in purity
He:
99.99% or higher in purity |
| Pressure reducer |
0.1 Mpa Variation:
0.03 MPa at maximum
| *The pressure regulator and the gas filter should be furnished by the user. |
|
| Purge Gas |
Gas used |
N2 |
| Supply pressure |
· Range: 0.5 to 0.8 MPa
· Variation: 0.03MPa |
| For chamber |
| Flow rate |
50 L/min or higher |
| Consumption per wafer |
6L
| *Provided that the purge time is 7 sec. and the wafer processing time is 60 sec. per wafer |
|
| For dry pump |
| Flow rate |
1.5 L/min or higher |
| Consumption per wafer |
1.5 L
| *Provided that wafer processing time per wafer is 60 sec. |
|
| Air |
Supply pressure |
· Range: 0.5
to 0.8 MPa
· Variation: 0.03MPa |
| Flow rate |
400 L/min or higher (ANR) |
| Water |
Water used for cooling electrodes: |
| Coolant water (Coolant unit) |
10 to 15 L(Total
of two coolant units)
| *Water is circularly used. Supply deionized water as needed. |
|
| Air Exhaust |
Three exhaust systems as detailed below are used for the machine. |
| (1)Machine main body exhaust system: |
| Function |
Detect gas leakage inside the machine.
| *This system prevents harmful gases from leaking outside of the machine when abnormality occurs in the machine or the process. |
|
| Exhaust
capacity |
4 m3/min or higher |
| Static pressure |
-1,200 Pa to -130
Pa
(at the exhaust duct hose connection port of the machine main body) |
| (2)Utility unit exhaust system: |
| Function |
Detect gas leakage inside the utility unit and exhaust heat. |
| Exhaust
capacity |
7 m3/min
or higher
(at the exhaust duct hose connection port of the machine main body when static pressure is as below mentioned) |
| Static pressure |
-1,200 Pa to -100
Pa
(at the exhaust duct hose connection port of the machine main body) |
| (3)Process gas exhaust system: |
| Function |
Exhaust gases after processing
* This system expels gases generated in the etching process after they pass through the gas filter.
Unused SF6 is included in the gases. |
|
| Exhaust capacity |
0.6m3/min or higher |
| Static pressure |
-1,200 Pa to -45
Pa
(at the exhaust duct hose connection port of the machine main body) |
| Machine
Dimensions |
Main body |
1,400 x 2,500 x
1,800 |
| Utility unit |
775 x 942 x 1,525 |
| Coolant unit (2) |
413 x 610 x 664(per unit) |
540 x 743 x 772(per unit) |
| Machine
Weight |
Main body |
About 870 kg |
About 1.048 kg |
| Utility unit |
About 230 Kg
(excluding the gas filter of about 40 kg) |
| Coolant unit (2) |
About 90 kg x 2 |
About 130 kg x 2 |
